Dependence of Energy Gap on x in CuAlxGa1-xS2 Mixed Crystal System
- 1 June 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (6R)
- https://doi.org/10.1143/jjap.27.972
Abstract
The transmission and reflectance spectra for various x in CuAl x Ga1-x S2 single crystals have been measured with polarized light. The photon energies of excitons associated with the uppermost valence bands are determined by analyzing the exciton absorption spectra and the reflectance anomaly spectra at room temperature and at about 80 K. The exciton energies have an approximately quadratic dependence of x. The valence band splitting is predominantly due to the crystal field splitting. The splitting energy varies almost linearly with x.Keywords
This publication has 15 references indexed in Scilit:
- Absorption Edge Studies of CuGaS2 Single CrystalJapanese Journal of Applied Physics, 1987
- Theory of the band-gap anomaly inchalcopyrite semiconductorsPhysical Review B, 1984
- Composition Dependence of the Band Gap of CuGaxIn1–xSe2 Solid SolutionsPhysica Status Solidi (b), 1982
- Temperature Dependence of Tetragonal Distortion and Crystal Field Splitting in CuGaS2Japanese Journal of Applied Physics, 1979
- Aspects of the band structure of CuGaand CuGaPhysical Review B, 1975
- Valence-band structure ofalloysPhysical Review B, 1974
- Electro-optic behavior and dielectric constants of ZnGeP2and CuGaS2Physical Review B, 1974
- Excitons and the Spin-Orbit Splitting in CuGaPhysical Review B, 1973
- ENERGY-GAP VARIATION IN MIXED III–V ALLOYSCanadian Journal of Physics, 1967
- Optical Properties of the Silver and Cuprous HalidesPhysical Review B, 1963