Simple model for the slope change of C‐V curves of irradiated MOS capacitors
- 1 February 1974
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (2) , 964-965
- https://doi.org/10.1063/1.1663352
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Image forces and the behavior of mobile positive ions in silicon dioxideApplied Physics Letters, 1973
- Dependence of MOS Device Radiation-Sensitivity on Oxide ImpuritiesIEEE Transactions on Nuclear Science, 1972
- Radiation resistance of Al2O3MOS devicesIEEE Transactions on Electron Devices, 1969
- Process Techniques and Radiation Effects in Metal-Insulator Semiconductor StructuresIEEE Transactions on Nuclear Science, 1967
- Irradiation of MIS Capacitors with High Energy ElectronsIEEE Transactions on Nuclear Science, 1966