Random background charges and Coulomb blockade in one-dimensional tunnel junction arrays
- 12 December 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (1) , 014201
- https://doi.org/10.1103/physrevb.63.014201
Abstract
We have numerically studied the behavior of one-dimensional tunnel junction arrays when random background charges are included using the “orthodox” theory of single-electron tunneling. Random background charge distributions are varied in both amplitude and density. The use of a uniform array as a transistor is discussed both with and without random background charges. An analytic expression for the gain near zero gate voltage in a uniform array with no background charges is derived. The gate modulation with background charges present is simulated.Keywords
All Related Versions
This publication has 8 references indexed in Scilit:
- Aluminium Single Electron Transistors with Islands Isolated from the SubstrateJournal of Low Temperature Physics, 2000
- Gain dependence of the noise in the single electron transistorJournal of Applied Physics, 1999
- Single-electron devices and their applicationsProceedings of the IEEE, 1999
- Shot noise of single-electron tunneling in one-dimensional arraysPhysical Review B, 1998
- Coulomb blockade threshold in inhomogeneous one-dimensional arrays of tunnel junctionsPhysical Review B, 1997
- Single-electron traps: A quantitative comparison of theory and experimentJournal of Applied Physics, 1997
- Observation of velocity-tuned resonances in the reflection of atoms from an evanescent light gratingPhysical Review A, 1994
- Collective transport in arrays of small metallic dotsPhysical Review Letters, 1993