Wavelength dependence of optical oxidation of silicon
- 12 March 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (6) , 298-300
- https://doi.org/10.1049/el:19870217
Abstract
Using a novel technique to amplify small increases in the oxidation rate of laser-irradiated silicon, we have successfully isolated a photonic contribution to the reaction induced by CW argon laser radiation.Keywords
This publication has 1 reference indexed in Scilit:
- Chapter 3 Optical and Electrical Properties of Pulsed Laser-Annealed SiliconPublished by Elsevier ,1984