Chapter 3 Optical and Electrical Properties of Pulsed Laser-Annealed Silicon
- 1 January 1984
- book chapter
- Published by Elsevier
- Vol. 23, 95-164
- https://doi.org/10.1016/s0080-8784(08)62436-9
Abstract
No abstract availableThis publication has 73 references indexed in Scilit:
- Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eVPhysical Review B, 1984
- Analysis of arsenic and phosphorus ion implanted silicon by spectroscopic ellipsometryApplied Physics Letters, 1982
- Comparison between Thermal and Laser Annealing in Ion-Implanted Silicon.MRS Proceedings, 1982
- Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometryJournal of Vacuum Science and Technology, 1981
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980
- Hydrogen passivation of point defects in siliconApplied Physics Letters, 1980
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometrySurface Science, 1975
- Temperature dependence of the band gap of siliconJournal of Applied Physics, 1974
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970