Analysis of arsenic and phosphorus ion implanted silicon by spectroscopic ellipsometry
- 1 July 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (1) , 93-95
- https://doi.org/10.1063/1.93301
Abstract
Crystalline damage of As+ and P+ ion implanted silicon has been investigated by spectroscopic ellipsometry at wavelengths in the range 325–400 nm. The experimental procedure takes care of the presence of a technology dependent surface layer. The measurements made can be unambiguously associated with crystalline damage and are sensitive to doses as low as two orders of magnitude below the amorphization dose.Keywords
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