The role of surface cleaning in the ellipsometric studies of ion-implanted silicon
- 1 January 1981
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 54 (3-4) , 251-252
- https://doi.org/10.1080/00337578108210055
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Characterization of ion-implanted GaAs by ellipsometryJournal of Applied Physics, 1980
- Ellipsometric study of annealing processes of phosphorus-ion-implanted layers of SiApplied Physics Letters, 1980
- Characterization of 31P+-implanted Si layers by ellipsometryJournal of Applied Physics, 1979
- Ellipsometric study of silicon implanted with boron ions in low dosesApplied Physics Letters, 1979
- Improved depth resolution of channeling measurements in Rutherford backscattering by a detector tiltNuclear Instruments and Methods, 1978
- Investigation of ion-implanted GaP layers by ellipsometryJournal of Applied Physics, 1977
- Complex refractive index and phosphorus concentration profiles in P+31 ion implanted silicon by ellipsometry and auger electron spectroscopySurface Science, 1976
- Surface Contamination of Silicon Produced by Ion ImplantationJapanese Journal of Applied Physics, 1976
- Ellipsometric study of tellurium implanted siliconRadiation Effects, 1976
- Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometrySurface Science, 1975