Complex refractive index and phosphorus concentration profiles in P+31 ion implanted silicon by ellipsometry and auger electron spectroscopy
- 30 June 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 56, 307-315
- https://doi.org/10.1016/0039-6028(76)90455-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometrySurface Science, 1975
- SiO2 thicknesses determination by reflection ellipsometry: Substrate effectsSurface Science, 1975
- Ellipsometric analysis of refractive index profiles produced by ion implantation in silica glassJournal of Physics D: Applied Physics, 1973
- In-depth profiles of phosphorus ion-implanted silicon by Auger spectroscopy and secondary ion emissionSurface Science, 1972
- Ellipsometric study of 400ev ion damage in siliconSurface Science, 1972
- Parameter-Correlation and Computational Considerations in Multiple-Angle Ellipsometry*Journal of the Optical Society of America, 1971
- Error analysis of angle of incidence measurementsSurface Science, 1969
- Ellipsometric Analysis of Radiation Damage in DielectricsJournal of Applied Physics, 1969
- A refined oxidation-stripping technique of thin n-type Si filmsRadiation Effects, 1969
- Thin Film Thickness Measurement Using Silver-Modified Newton's RingsReview of Scientific Instruments, 1963