Ellipsometric study of tellurium implanted silicon
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 28 (3) , 129-131
- https://doi.org/10.1080/00337577608237430
Abstract
Ellipsometric parameters as a function of the dose (D = 2.1013 − 2.1015 ions cm−2) and annealing temperature have been measured on the silicon implanted with 30 keV Te ions. Obtained information on lattice disorder are to a great extent comparable with those of other methods, e.g. backscattering technique. Moreover optical constants of a damage surface layer may be estimated.Keywords
This publication has 6 references indexed in Scilit:
- Optical properties of ion bombarded silica glassRadiation Effects, 1973
- Ellipsometric study of 400ev ion damage in siliconSurface Science, 1972
- Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and DoseJournal of Applied Physics, 1972
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- Measurement of the thickness and refractive index of very thin films and the optical properties of surfaces by ellipsometryJournal of Research of the National Bureau of Standards Section A: Physics and Chemistry, 1963