Ellipsometric study of annealing processes of phosphorus-ion-implanted layers of Si
- 15 March 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (6) , 451-453
- https://doi.org/10.1063/1.91543
Abstract
The annealing processes of high‐dose P+‐ion‐implanted Si are studied by ellipsometry. The change in ellipsometric angle (Δ, ψ) during isothermal annealing is measured and compared with that of values calculated using a simple epitaxial regrowth model based on the distribution of the optical constants. The discrepancy between the experimental and the calculated change in angle shows imperfectness of annealing in the 500–550 °C temperature range.Keywords
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