Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogen
- 1 July 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (7) , 2891-2896
- https://doi.org/10.1063/1.324099
Abstract
Oxide growth kinetics of SiO2 films grown on silicon at 950 to 1100 °C in an O2/N2 mixture is empirically studied. It is found that a linear-parabolic law is in excellent agreement with the oxidation data under the oxygen partial pressure PO2 of 1 or 10−1 atm. However, a parabolic law is obtained at 10−2 atm, and an inverse-logarithmic law at 10−3 atm. The Mott-Cabrera oxidation rate equation is adapted to the thermal oxidation of silicon in the case of PO2≲10−2 atm. Finally, 43.9 kcal/mole is derived as the activation energy value of silicon atoms entering into the oxide.This publication has 14 references indexed in Scilit:
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