Damage profile determination of ion-implanted Si layers by ellipsometry
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8) , 4125-4129
- https://doi.org/10.1063/1.328231
Abstract
The damage profile in P+‐ion‐implanted Si is investigated by ellipsometry. Ellipsometric data are analyzed based on a three‐layer model, i.e., SiO2 surface layer–implantation‐induced amorphous Si (a‐Si) layer–crystal Si (c‐Si) substrate. The a‐Si layer thickness is estimated for three implantation energies, 100, 50, and 30 keV at a fixed dose of 5×1015 cm−2. It is shown that a consistent interpretation of the data is possible taking into account the finite‐width transition region between a‐Si and c‐Si. Assuming the transition layer to be random mixtures of a‐Si and c‐Si particles, the optical constant distribution in the transition layer is calculated using the effective medium theory for small particle composites. This model is used to estimate transition layer width.This publication has 11 references indexed in Scilit:
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