Ellipsometric and channelling studies on ion-implanted silicon
- 1 May 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 591-594
- https://doi.org/10.1016/0029-554x(81)90781-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Characterization of 31P+-implanted Si layers by ellipsometryJournal of Applied Physics, 1979
- Ellipsometric study of silicon implanted with boron ions in low dosesApplied Physics Letters, 1979
- Ion-beam induced epitaxy of siliconPhysics Letters A, 1979
- Surface Contamination of Silicon Produced by Ion ImplantationJapanese Journal of Applied Physics, 1976
- Ellipsometric study of tellurium implanted siliconRadiation Effects, 1976
- High dose effects in ion implantationRadiation Effects, 1976
- Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometrySurface Science, 1975
- Ellipsometric study of 400ev ion damage in siliconSurface Science, 1972