Calculation of temperature effects on the equilibrium crystal shape of Si near (100)
- 15 January 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (3) , 1919-1927
- https://doi.org/10.1103/physrevb.49.1919
Abstract
We present a statistical model of step meandering on small-miscut vicinal Si(100) surfaces, generalized to treat arbitrary azimuth. The model is solved using a transfer-matrix technique and the free energy of the vicinal Si(100) surface is calculated. From the free energy the equilibrium crystal shape is derived at various temperatures. The results are compared with existing experimental data.Keywords
This publication has 19 references indexed in Scilit:
- Variable-temperature STM measurements of step kinetics on Si(001)Physical Review B, 1993
- Interaction of a relaxing system with a dynamical environmentPhysical Review E, 1993
- Behavior of steps on Si(001) as a function of vicinalityPhysical Review B, 1993
- Why monatomic steps on Si(001) are always roughPhysical Review Letters, 1993
- Step morphologies on small-miscut Si(001) surfacesPhysical Review B, 1993
- Equilibrium crystal shape of silicon near (001)Physical Review B, 1993
- Equilibrium structure of monatomic steps on vicinal Si(001)Physical Review B, 1992
- Wavy steps on Si(001)Physical Review Letters, 1992
- Equilibrium structures of Si(100) stepped surfacesPhysical Review Letters, 1990
- Direct determination of step and kink energies on vicinal Si(001)Physical Review Letters, 1990