Growth and structural properties of epitaxial GaxIn1−xP on InP
- 15 February 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (4) , 1737-1743
- https://doi.org/10.1063/1.351206
Abstract
The growth of heteroepitaxial GaxIn1−xP on InP for 0<xx4 meV per unit strain is in good agreement with that predicted from elasticity theory.This publication has 28 references indexed in Scilit:
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