Charge injection over triangular barriers in unipolar semiconductor structures
- 15 May 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (10) , 810-812
- https://doi.org/10.1063/1.92140
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980
- New rectifying semiconductor structure by molecular beam epitaxyApplied Physics Letters, 1980
- A majority-carrier camel diodeApplied Physics Letters, 1979
- Coupled-line circuit with adjustable input conductanceElectronics Letters, 1979