Inhibited Spontaneous Emission in Solid-State Physics and Electronics
- 18 May 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (20) , 2059-2062
- https://doi.org/10.1103/physrevlett.58.2059
Abstract
It has been recognized for some time that the spontaneous emission by atoms is not necessarily a fixed and immutable property of the coupling between matter and space, but that it can be controlled by modification of the properties of the radiation field. This is equally true in the solid state, where spontaneous emission plays a fundamental role in limiting the performance of semiconductor lasers, heterojunction bipolar transistors, and solar cells. If a three-dimensionally periodic dielectric structure has an electromagnetic band gap which overlaps the electronic band edge, then spontaneous emission can be rigorously forbidden.Keywords
This publication has 12 references indexed in Scilit:
- Survey of defect-mediated recombination lifetimes in GaAs epilayers grown by different methodsApplied Physics Letters, 1987
- Reduction of lasing threshold current density by the lowering of valence band effective massJournal of Lightwave Technology, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986
- An optimized π/2 distributed feedback laserIEEE Journal of Quantum Electronics, 1985
- Inhibited Spontaneous Emission by a Rydberg AtomPhysical Review Letters, 1985
- Observation of inhibited spontaneous emissionPhysical Review Letters, 1985
- Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAsJournal of Applied Physics, 1978
- Antisymmetric taper of distributed feedback lasersIEEE Journal of Quantum Electronics, 1976
- Coupled-Wave Theory of Distributed Feedback LasersJournal of Applied Physics, 1972
- Resonance Absorption by Nuclear Magnetic Moments in a SolidPhysical Review B, 1946