Implications in the use of sputtering for layer removal: the system Au on Si
- 1 January 1979
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 43 (3) , 105-110
- https://doi.org/10.1080/01422447908226479
Abstract
Au films deposited on Si substrates have been sputtered by 20 and 100 keV Ar bombardment, respectively. Bombardment-induced intermixing of Au and Si was observed at film thicknesses considerably larger than the projectile range. Due to radiation-enhanced diffusion, the partial sputtering yield of Au from Si-Au alloys decreases with increasing fluence. Complete removal of Au from Si is impossible if Ar ions are used for sputtering.Keywords
This publication has 13 references indexed in Scilit:
- Structure investigations on single-crystal gold filmsApplied Physics A, 1977
- Surface-layer composition changes in sputtered alloys and compoundsApplied Physics Letters, 1977
- Determination of Stopping Cross Sections by Rutherford BackscatteringPublished by Springer Nature ,1976
- Ion-induced migration of Cu into SiJournal of Applied Physics, 1975
- Atom movements occurring at solid metal-semiconductor interfacesJournal of Vacuum Science and Technology, 1974
- Ion beam sputtering - the effect of incident ion energy on atomic mixing in subsurface layersRadiation Effects, 1974
- Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solidsRadiation Effects, 1973
- Sputtering of gold bombarded by 20–50 keV A+ and Xe+ ionsSurface Science, 1972
- Helium ion stopping cross sections in goldRadiation Effects, 1972
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969