Ion-induced migration of Cu into Si
- 1 May 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (5) , 1947-1951
- https://doi.org/10.1063/1.321871
Abstract
Ion bombardment of Cu‐contaminated Si surfaces with either 20‐keV Ne+ or 800‐eV Ar+ ions leads to enhanced migration of Cu into the bulk of the Si to depths comparable to the projected range of the incident ions. The migration proceeds sufficiently rapidly to prevent sputter removal of submonolayer amounts of Cu even though as much as 100 Å of the substrate is sputtered away. The enhanced migration is probably caused by defect production during the slowing down of the incident ions. The depth distribution of the Cu following Ne+ or Ar+ bombardments was determined from backscattered energy spectra of 280‐keV α particles.This publication has 15 references indexed in Scilit:
- Migration of Mo atoms across Mo–Si interface induced by Ar+ ion bombardmentApplied Physics Letters, 1974
- Sputtering yields and Specific energy losses of Ar+Ions with energies from 5 TO 30 KeV AT SiO2Radiation Effects, 1974
- The detection sensitivity of heavy impurities in Si using 280 keV He2+ and C2+ back-scatteringThin Solid Films, 1973
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Relationship between sputter cleaning parameters and surface contaminantsJournal of Applied Physics, 1973
- Sputtering-yield studies on silicon and silver targetsRadiation Effects, 1973
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- The theory of recoil implantationRadiation Effects, 1969
- Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low-Energy Electron DiffractionJournal of Applied Physics, 1958