GaAs surface oxidation-related photoluminescence transients
- 1 August 1983
- journal article
- Published by Elsevier in Surface Science
- Vol. 130 (2) , 259-268
- https://doi.org/10.1016/0039-6028(83)90360-6
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Effect of low-intensity laser radiation during oxidation of the GaAs(110) surfaceJournal of Vacuum Science and Technology, 1982
- Photoemission studies of the interaction of oxygen with GaAs(110)Physical Review B, 1982
- GaAs surface states observed by x-ray photoemissionJournal of Vacuum Science and Technology, 1979
- Gas adsorption on cleaved GaAs(110) surfaces studied by surface photovoltage spectroscopyJournal of Vacuum Science and Technology, 1979
- Surface states at clean, cleaved GaAs(110) surfacesJournal of Vacuum Science and Technology, 1979
- Oxidation of ordered and disordered GaAs(110)Journal of Vacuum Science and Technology, 1979
- Photoluminescence at dislocations in GaAs and InPJournal of Applied Physics, 1979
- The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)Surface Science, 1979
- Photoluminescence investigation of the band around 1.41 eV in heated n-GaAs samplesJournal of Applied Physics, 1978
- Degradation of photoluminescence intensity caused by excitation-enhanced oxidation of GaAs surfacesApplied Physics Letters, 1977