Degradation of photoluminescence intensity caused by excitation-enhanced oxidation of GaAs surfaces
- 1 October 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (7) , 473-475
- https://doi.org/10.1063/1.89745
Abstract
Rapid degradation of photoluminescence (PL) intensity under high excitation level (∼1 kW/cm2) was observed at fresh surfaces of GaAs crystals made by various growth methods. The Auger analyses showed quick oxide formation at the photoexcited GaAs surfaces. The degraded PL intensity was recovered by etchings only the oxide layers; thus, the cause of PL degradation was ascribed to the increase of nonradiative recombination at the oxide‐GaAs interface. The oxidation process was proved to be athermal. In contrast to GaAs, Al0.3Ga0.7As and InP showed no or slow degradations, respectively, under the same excitation condition.Keywords
This publication has 6 references indexed in Scilit:
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977
- Deep-level changes associated with the degradation of gallium phosphide red-light-emitting diodesJournal of Applied Physics, 1976
- Degradation of bulk luminescence in GaP : Zn,O induced by laser excitationJournal of Applied Physics, 1976
- Electron stimulated oxidation of GaAs, studied by quantitative auger electron spectroscopySurface Science, 1975
- Improved method of anodic oxidation of GaAsElectronics Letters, 1975
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973