Control of photoluminescence wavelength from uniform InAs quantum dots by annealing
- 1 May 2005
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 244 (1-4) , 88-91
- https://doi.org/10.1016/j.apsusc.2004.09.131
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 10 references indexed in Scilit:
- Facet Formation of Uniform InAs Quantum Dots by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 2003
- Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity capApplied Physics Letters, 2001
- Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size DistributionJapanese Journal of Applied Physics, 2000
- Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixingJournal of Applied Physics, 2000
- Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dotsApplied Physics Letters, 1998
- A universal damage induced technique for quantum well intermixingApplied Physics Letters, 1998
- Tuning self-assembled InAs quantum dots by rapid thermal annealingApplied Physics Letters, 1997
- Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealingApplied Physics Letters, 1996
- Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dotsApplied Physics Letters, 1996
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982