Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
- 16 June 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (25) , 3335-3337
- https://doi.org/10.1063/1.121595
Abstract
Postgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dots grown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing of the luminescence linewidth (from 78.9 to 20.5 meV) from the InAs dot layer occurs together with about 260 meV blueshift at annealing temperatures up to 850 °C. Observation of high-resolution transmission electron microscopy shows the existence of the dots under lower annealing temperatures but disappearance of the dots annealed at 850 °C. The excited-state-filling experiments for the samples show that the luminescence of the samples annealed at 850 °C exhibits quantum well-like behavior. Comparing with the reference quantum well, we demonstrate significant enhancement of the interdiffusion in the dot layer.Keywords
This publication has 13 references indexed in Scilit:
- Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transitionApplied Physics Letters, 1997
- Intermixing and shape changes during the formation of InAs self-assembled quantum dotsApplied Physics Letters, 1997
- Tuning self-assembled InAs quantum dots by rapid thermal annealingApplied Physics Letters, 1997
- Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealingApplied Physics Letters, 1996
- State filling and time-resolved photoluminescence of excited states in As/GaAs self-assembled quantum dotsPhysical Review B, 1996
- Self-organized growth of quantum-dot structuresSemiconductor Science and Technology, 1996
- Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dotsApplied Physics Letters, 1996
- Phonon bottleneck in self-formedquantum dots by electroluminescence and time-resolved photoluminescencePhysical Review B, 1996
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993