Second Harmonic Generation of Epitaxially-Grown GaN Crystal
- 1 September 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (9)
- https://doi.org/10.1143/jjap.19.1641
Abstract
The magnitudes of the SHG coefficients, d 31, d 33 and d 15 of GaN and the relative sign of d 31 and d 33 have been measured, using an epitaxially-grown crystal sample. The observed values of d 31/d 33 and d 15/d 33 were -0.48 and -0.58, respectively, and |d 33|=88×|d 11(quartz)|. The reliability of the Maker fringe technique in SHG measurement for an epitaxially-grown sample as thin as 30 µm is discussed from the experimental point of view.Keywords
This publication has 12 references indexed in Scilit:
- Non-linear optical properties of GaNOptics Communications, 1977
- Crystal structure refinement of AlN and GaNSolid State Communications, 1977
- Epitaxial Growth of Undoped and Mg-Doped GaNJapanese Journal of Applied Physics, 1976
- Bond-Charge Calculation of Nonlinear Optical Susceptibilities for Various Crystal StructuresPhysical Review B, 1973
- Linear and nonlinear optical properties of AgGaS2, CuGaS2, and CuInS2, and theory of the wedge technique for the measurement of nonlinear coefficientsIEEE Journal of Quantum Electronics, 1971
- Refractive index of GaNPhysica Status Solidi (a), 1971
- Analyse des expériences de génération de second harmoniqueRevue de Physique Appliquée, 1971
- Invariants of the Third-Rank Cartesian Tensor: Optical Nonlinear SusceptibilitiesPhysical Review B, 1970
- Relations between the components of the non-linear polarisability tensor in cubic and hexagonal II–VI compoundsPhysics Letters A, 1968
- Nonlinear Dielectric Polarization in Optical MediaPhysical Review B, 1962