Crystal structure refinement of AlN and GaN
- 4 September 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 23 (11) , 815-819
- https://doi.org/10.1016/0038-1098(77)90959-0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Axial ratios of MX compounds with the wurtzite structureMaterials Research Bulletin, 1976
- Local approach to polarizabilities and trends in the Raman spectra of semiconductorsSolid State Communications, 1976
- Bond-orbital model. IIPhysical Review B, 1974
- Fundamental absorption edge in GaN, InN and their alloysSolid State Communications, 1972
- Mean square vibration displacements and atomic scattering factors of aluminum nitride ionsActa Crystallographica Section A, 1968
- X-ray scattering factors computed from numerical Hartree–Fock wave functionsActa Crystallographica Section A, 1968
- Inclusion of secondary extinction in least-squares calculationsActa Crystallographica, 1967
- Dimorphism of Para-DichlorobenzeneThe Journal of Chemical Physics, 1955
- Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und MetallnitrideZeitschrift für anorganische und allgemeine Chemie, 1938
- Das Gitter des Aluminiumnitrids (AlN)The European Physical Journal A, 1924