Oxygen Precipitation in Silicon - Its Effects on Minority Carrier Recombination and Generation Lifetime
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Effect of oxide precipitates on minority-carrier lifetime in Czochralski-grown siliconApplied Physics Letters, 1982
- Oxygen precipitation effects on Si n+-p junction leakage behaviorApplied Physics Letters, 1982
- Precipitation of oxygen in silicon: Some phenomena and a nucleation modelJournal of Applied Physics, 1981
- Lifetime improvement in Czochralski-grown silicon wafers by the use of a two-step annealingApplied Physics Letters, 1980
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967
- The configuration and diffusion of isolated oxygen in silicon and germaniumJournal of Physics and Chemistry of Solids, 1964
- Analysis and characterization of P-N junction diode switchingIEEE Transactions on Electron Devices, 1964
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956