Effect of oxide precipitates on minority-carrier lifetime in Czochralski-grown silicon
- 15 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 719-721
- https://doi.org/10.1063/1.93203
Abstract
The effect of oxide precipitate in Czochralski-grown silicon crystals on minority-carrier lifetime was investigated. The oxide precipitates, generated by heterogeneous nucleation in as-grown crystals were found to decrease the lifetime. On the other hand, the oxide precipitates generated by homogeneous nucleation decreased the lifetime when their length was greater than 100 Å. The minority-carrier lifetime was nearly proportional to the reciprocal of the oxide precipitate length.Keywords
This publication has 6 references indexed in Scilit:
- Improvement in CZ Silicon Wafer by Reducing Oxygen ImpurityJapanese Journal of Applied Physics, 1981
- Diffusion-limited growth of oxide precipitates in czochralski silisonJournal of Crystal Growth, 1980
- Electrical Characterization of Micro Defects in Silicon CrystalJapanese Journal of Applied Physics, 1980
- A Nondestructive Method for Measuring the Spatial Distribution of Minority Carrier Lifetime in Silicon WaferJapanese Journal of Applied Physics, 1979
- Stacking Faults from Oxide Precipitates in CZ SiliconJapanese Journal of Applied Physics, 1979
- The electrical properties of stacking faults and precipitates in heat-treated dislocation-free Czochralski siliconApplied Physics Letters, 1977