Novel non-destructive method of measurement of the dead layer thickness of A p+/n (or an n+/p) silicon solar cell
- 31 January 1985
- journal article
- Published by Elsevier in Solar Cells
- Vol. 13 (3) , 271-275
- https://doi.org/10.1016/0379-6787(85)90020-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Diffusion length determination in n+-p+-p+ structure based silicon solar cells from the intensity dependence of the short-circuit current for illumination from the p+ sideSolar Cells, 1983
- Porous Silicon Oxide Anti‐Reflection Coating for Solar CellsJournal of the Electrochemical Society, 1982
- Fabrication of P+-N-N+ silicon solar cells by simultaneous diffusion of boron and phosphorus into silicon through silicon dioxideJournal of Applied Physics, 1981
- Dopant profile analysis of boron in solar grade poly- and single- crystalline siliconApplied Physics Letters, 1981
- Temperature effects in silicon solar cellsSolid-State Electronics, 1980
- High-efficiency p+-n-n+ back-surface-field silicon solar cellsApplied Physics Letters, 1978