Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer
- 1 September 1998
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 15 (9) , 674-676
- https://doi.org/10.1088/0256-307x/15/9/018
Abstract
Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photoluminescence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450 nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.Keywords
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