Channeled and random proton stopping power in the 30-1000 keV energy range
- 1 May 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 17 (9) , 3492-3500
- https://doi.org/10.1103/physrevb.17.3492
Abstract
The stopping power of 30- to 1000-keV protons transmitted through silicon in random and channeling (, , and ) directions has been determined. It was found that the stopping power for random and all channeling directions reaches a maximum at about 50 keV. At nearly the same energy the ratio of the channeled-to-random stopping has the maximum value. Present results are compared to the current theories and some previous experimental data.
Keywords
This publication has 15 references indexed in Scilit:
- Determination of random and aligned stopping powers for 80–300 keV protons in silicon by back-scattering measurementsRadiation Effects, 1977
- Nuclear and electronic stopping powers of low energy ions with Z ⩽ 10 in siliconNuclear Instruments and Methods, 1976
- Hydrogen implantation in silicon between 1.5 and 60 kevRadiation Effects, 1976
- Energy loss of low energy protons channeling in silicon crystalsRadiation Effects, 1975
- Random stopping power for protons in siliconRadiation Effects, 1972
- Transmission energy loss of light channeled particles in thin silicon crystalsRadiation Effects, 1972
- Channeling in Diamond-Type and Zinc-Blende Lattices: Comparative Effects in Channeling of Protons and Deuterons in Ge, GaAs, and SiPhysical Review B, 1967
- Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single CrystalsPhysical Review B, 1967
- Zur Bremsung rasch bewegter Teilchen beim Durchgang durch MaterieAnnalen der Physik, 1933
- Zur Theorie des Durchgangs schneller Korpuskularstrahlen durch MaterieAnnalen der Physik, 1930