Ge-doped p-type epitaxial GaAs for microwave device application
- 15 May 1973
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (10) , 525-526
- https://doi.org/10.1063/1.1654494
Abstract
GaAs p‐n junctions were grown by liquid‐phase epitaxy using Ge as the acceptor and Sn as the donor. Abrupt junctions with well‐controlled carrier concentrations in both the n and the p layers were produced. High‐quality varactors and double‐drift GaAs IMPATT diodes were fabricated. cw output power of 3.0 W with 15.8% efficiency at 8.9 GHz and pulse output power of 4.1 W with 20.7% efficiency at 10.56 GHz were observed.Keywords
This publication has 9 references indexed in Scilit:
- X-band GaAs double-drift IMPATT devicesProceedings of the IEEE, 1973
- Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new techniqueJournal of Crystal Growth, 1972
- The Growth of Ge-GaAs and GaP-Si Heterojunctions by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1972
- Distribution Coefficient of Germanium in Gallium Arsenide Crystals Grown from Gallium SolutionsJournal of Applied Physics, 1971
- Fabrication and noise performance of high-power GaAs IMPATTSProceedings of the IEEE, 1971
- Double-drift-region (p+pnn+) avalanche diode oscillatorsProceedings of the IEEE, 1970
- Zinc-Diffused GaAs Electroluminescent Diodes with Long Operating LifeJournal of Applied Physics, 1970
- Germanium-Doped Gallium ArsenideJournal of Applied Physics, 1970
- Quantum efficiency of GaAs electroluminescent diodesSolid-State Electronics, 1966