Diode n‐p CuInSe2 Structures Fabricated by Oxygen Implantation
- 1 November 1990
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 25 (11) , 1299-1302
- https://doi.org/10.1002/crat.2170251113
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- AIBIIICVI2‐Halbleiter mit ChalcopyritstrukturZeitschrift für Chemie, 1987
- Influence of intrinsic defects on the electrical properties of AIBIIIC compoundsCrystal Research and Technology, 1983
- Electroluminescence in Br-, Cl-, and Zn-implanted CuInSe2 p-n junction diodesApplied Physics Letters, 1976
- Cadmium−diffused CuInSe2 junction diode and photovoltaic detectionApplied Physics Letters, 1975