Electroluminescence in Br-, Cl-, and Zn-implanted CuInSe2 p-n junction diodes
- 15 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (4) , 214-216
- https://doi.org/10.1063/1.88701
Abstract
p‐n junction diodes have been prepared by implanting Br, Cl and Zn into p‐type CuInSe2. The forward current‐voltage characteristics can be expressed by I=I0[exp (eV/nkT)−1] with the parameter n≃2. Junctions made by implanting Br and Zn show rectification ratios of 2–3×105 : 1 at 1 V. Electroluminescence was observed in the wavelength region 1.3–1.4 μ with internal quantum efficiency of 20% at 77 °K and 0.1% at room temperature.Keywords
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