Electroluminescence and photovoltaic detection in Cd-implanted CuInSe2 p-n junction diodes
- 15 June 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (12) , 717-719
- https://doi.org/10.1063/1.88048
Abstract
p‐n junction diodes have been prepared by the ion implantation of Cd into p‐type CuInSe2. Electroluminescence is observed near 1.3 μ with internal quantum efficiency of 15% at 77 °K and ∼0.1% at room temperature. The photovoltaic response of typical diodes has a quantum efficiency of 60–70% in the wavelength region 0.7–1.1 μ.Keywords
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