Some electrical properties of AgGaS2

1 August 1974

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 45 (8) , 3694-3696
https://doi.org/10.1063/1.1663842

Abstract

Results of Hall‐effect and resistivity measurements on semi‐insulating undoped AgGaS₂ are reported. Both shallow (∼0.11 eV) and deep (∼0.72 eV) acceptor levels were observed from p‐type crystals. Crystal resistance is not readily changed by heat treatment.

This publication has 7 references indexed in Scilit:

Sharp-line and broad-band emission in AgGaS2 crystals
Journal of Applied Physics, 1974
Tunable infrared down-conversion in silver thiogallate
Optics Communications, 1973
Electroreflectance and Absorption-Edge Studies of AgGa $S_{2}$ and AgGa ${Se}_{2}$
Physical Review B, 1972
Direct measurement of the birefringence of AgGaS2
Optics Communications, 1972
Room-Temperature Electrical Properties of Ten I-III-VI2 Semiconductors
Journal of Applied Physics, 1972
Optical and Electrical Properties of AgGa $S_{2}$ and AgGa ${Se}_{2}$
Physical Review B, 1971
Linear and nonlinear optical properties of AgGaS2, CuGaS2, and CuInS2, and theory of the wedge technique for the measurement of nonlinear coefficients
IEEE Journal of Quantum Electronics, 1971