Electrical transport properties of epitaxial graded-GaP CdxHg1—xTe layers
- 16 August 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 42 (2) , 721-727
- https://doi.org/10.1002/pssa.2210420238
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Energy level diagram of high-efficiency CdxHg1−xTe Photo-DiodesInfrared Physics, 1977
- Epitaxial CdxHg1−xTe photovoltaic detectorsInfrared Physics, 1976
- The properties and applications of the Hg1−xCdxTe alloy systemPublished by Springer Nature ,1976
- A Warm Carrier Effect in Junctions and Graded Mixed SemiconductorsPhysica Status Solidi (a), 1975
- Non-linear electrical effect in graded effective mass CdxHg1-xTe layersPhysica Status Solidi (a), 1975
- Nonlinear conductivity tensor in graded mixed semiconductorsPhysical Review B, 1975
- Photoelectronic Properties of Graded Composition Crystals of II-VI SemiconductorsJournal of Applied Physics, 1971
- Transport of photocarriers in CdxHg1−xTe graded-gap structuresSolid-State Electronics, 1968
- CdTe–HgTe HeterostructuresJournal of Applied Physics, 1968
- Anti-Stokes' light converter based on graded-band-gap semiconductorsSolid-State Electronics, 1967