On precipitatelike zones in as-grown GaAs
- 1 August 1975
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (8) , 3689
- https://doi.org/10.1063/1.322104
Abstract
The presence of precipitatelike zones in as‐grown GaAs is reviewed in light of recent criticisms. It is concluded that there is sufficient evidence to support the existence of precipitatelike zones in GaAs and, therefore, the role of these precipitates in determining optical absorptivity coefficients must be considered.This publication has 5 references indexed in Scilit:
- Comment on ’’Evidence of a precipitatelike zone in as-grown GaAs and its influence on optical absorptivity’’Journal of Applied Physics, 1975
- Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type SemiconductorsJournal of the Electrochemical Society, 1975
- Microscopic Defects and Infrared Absorption in Cadmium TelluridePhysica Status Solidi (a), 1975
- Anomalous diffraction effects in gallium arsenide single crystalsPhysica Status Solidi (a), 1974
- Evidence of a precipitatelike zone in as-grown GaAs and its influence on optical absorptivityJournal of Applied Physics, 1974