High-speed operation of resonant tunnelling flip-flopcircuit employing MOBILE (monostable-bistable transition logic element)
- 25 September 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (20) , 1733-1734
- https://doi.org/10.1049/el:19971176
Abstract
A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18 Gbit/s were demonstrated at room temperature.Keywords
This publication has 2 references indexed in Scilit:
- InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devicesIEEE Electron Device Letters, 1996
- Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminalsIEEE Transactions on Electron Devices, 1994