InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices
- 1 March 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (3) , 127-129
- https://doi.org/10.1109/55.485189
Abstract
MOBILEs (monostable-bistable transition logic elements), which have the advantages of multiple-input and multiple-function, are demonstrated in InP-based material system using monolithic integration of resonant-tunneling diodes and high electron mobility transistors. The high peak current density, high peak-to-valley ratio, and high transconductance, which are required for high-performance MOBILEs, are demonstrated in this InP-based material system. A fabricated MOBILE with three-input gates having 1:2:4 width ratio can perform weighted-sum threshold logic operation, and has a wide range of applications in new computing architectures, such as neural networks.Keywords
This publication has 13 references indexed in Scilit:
- Device technologies for InP-based HEMTs and their application to ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Flexible and reduced-complexity logic circuits implemented with resonant tunneling transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologiesIEEE Transactions on Electron Devices, 1996
- Picosecond-switching time of In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes measured by electro-optic sampling techniqueIEEE Electron Device Letters, 1995
- Analysis of Switching Time of Monostable-Bistable Transition Logic Elements Based on Simple Model CalculationJapanese Journal of Applied Physics, 1995
- Reset-set flipflop based on a novel approach ofmodulatingresonant-tunnelling current with FET gatesElectronics Letters, 1994
- InGaAs-based resonant tunnelling barrier structures grown by MBESemiconductor Science and Technology, 1994
- Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminalsIEEE Transactions on Electron Devices, 1994
- Weighted sum threshold logic operation of MOBILE (monostable-bistable transition logic element) using resonant-tunneling transistorsIEEE Electron Device Letters, 1993
- Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InPJournal of the Electrochemical Society, 1992