High temperature continuous wave operation of InAs quantum dot lasers near 1.3 μm
- 13 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivityIEEE Photonics Technology Letters, 2000
- Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1–1.3 μm semiconductor lasersApplied Physics Letters, 2000
- Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laserIEEE Photonics Technology Letters, 2000
- High-performance GaInAs/GaAs quantum-dot lasers based on a single active layerApplied Physics Letters, 1999
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasersIEEE Photonics Technology Letters, 1999