Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity
- 1 September 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (9) , 1120-1122
- https://doi.org/10.1109/68.874208
Abstract
Data are presented on continuous wave operation of two-stack quantum dot lasers designed with reduced temperature sensitivity in their threshold. The InAs quantum dots are designed to have a wide energy spacing (/spl sim/102 meV) between the ground and first excited radiative transitions. Selectively oxidized stripe lasers have continuous wave threshold currents as low as 1.2 mA for 2 μm wide stripes and minimum threshold current densities of 26 A/cm 2 for 13-μ-m wide stripes. Broad area lasers have continuous wave threshold current densities as low as 40 A/cm 2 , even for p-up mounting. Ground state lasing is obtained up to the highest temperature measured of 326 K.Keywords
This publication has 11 references indexed in Scilit:
- Temperature dependence of gain saturation in multilevel quantum dot lasersIEEE Journal of Quantum Electronics, 2000
- Discrete energy level separation and the threshold temperature dependence of quantum dot lasersApplied Physics Letters, 2000
- Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laserIEEE Photonics Technology Letters, 2000
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laserApplied Physics Letters, 1999
- 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mAIEEE Photonics Technology Letters, 1999
- 1.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decompositionElectronics Letters, 1999
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasersIEEE Photonics Technology Letters, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Native oxide top- and bottom-confined narrow stripe p-n AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure laserApplied Physics Letters, 1993
- Hydrolyzation oxidation of AlxGa1−xAs-AlAs-GaAs quantum well heterostructures and superlatticesApplied Physics Letters, 1990