1.3 μm room-temperature GaAs-based quantum-dot laser
- 2 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (18) , 2564-2566
- https://doi.org/10.1063/1.122534
Abstract
Room-temperature lasing at the wavelength of 1.31 μm is achieved from the ground state of an InGaAs/GaAs quantum-dot ensemble. At 79 K, a very low threshold current density of 11.5 A/cm2 is obtained at a wavelength of 1.23 μm. The room-temperature lasing at 1.31 μm is obtained with a threshold current density of 270 A/cm2 using high-reflectivity facet coatings. The temperature-dependent threshold with and without high-reflectivity end mirrors is studied, and ground-state lasing is obtained up to the highest temperature investigated of 324 K.Keywords
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