Quantum dot resonant cavity photodiode with operationnear 1.3 µm wavelength
- 17 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (15) , 1337-1339
- https://doi.org/10.1049/el:19970906
Abstract
It is shown that strained-layer InGaAs quantum dots grown on GaAs substrates can extend the operating wavelength of GaAs-based optoelectronic devices to wavelengths near 1.3 µm. Specifically, a 1.27 µm resonant-cavity photodiode with a quantum dot absorbing region is demonstrated. This photodiode exhibits a peak external quantum efficiency of 49% with a spectral bandwidth of 1.2 nm.Keywords
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