Resonant cavity-enhanced (RCE) photodetectors
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (8) , 2025-2034
- https://doi.org/10.1109/3.83412
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collectorApplied Physics Letters, 1990
- Multilayer reflectors by molecular-beam epitaxy for resonance enhanced absorption in thin high-speed detectorsJournal of Vacuum Science & Technology B, 1990
- Novel method for centre wavelength tuning of silica waveguide type Mach-Zehnder multi/demultiplexersElectronics Letters, 1990
- High-speed performance of OMCVD grown InAlAs/InGaAs MSM photodetectors at 1.5 mu m and 1.3 mu m wavelengthsIEEE Photonics Technology Letters, 1989
- Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlatticeApplied Physics Letters, 1989
- Analysis and design of surface-normal Fabry-Perot electrooptic modulatorsIEEE Journal of Quantum Electronics, 1989
- Ultrawide-band long-wavelength p-i-n photodetectorsJournal of Lightwave Technology, 1987
- InP/In0.53Ga0.47As heterojunction phototransistors grown by chemical beam epitaxyIEEE Electron Device Letters, 1987
- Review and status of wavelength-division-multiplexing technology and its applicationJournal of Lightwave Technology, 1984
- Dynamic single-mode semiconductor lasers with a distributed reflectorJournal of Lightwave Technology, 1983