Ultrawide-band long-wavelength p-i-n photodetectors
- 1 October 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 5 (10) , 1339-1350
- https://doi.org/10.1109/jlt.1987.1075419
Abstract
We compare different designs for very high-speed (millimeter-wave) long-wavelength photodetectors, different materials for such detectors, and different ways of characterizing the speed of these devices. Experimental results are given, showing high-speed response with bandwidths beyond 50 GHz, impulse responses less than 10 ps, and detection sensitivities to 0.1 fJ in packaged devices. Discussed is the inherent bandwidth-efficiency limit in conventional p-i-n detectors, which is then compared to theoretical and experimental results for waveguide-geometry detectors.Keywords
This publication has 44 references indexed in Scilit:
- 16 Gbit/s direct modulation of an InGaAsP laserElectronics Letters, 1987
- Direct fibre-optic transmission of entire microwave satellite antenna signalsElectronics Letters, 1987
- Millimetre-waveguide-mounted InGaAs photodetectorsElectronics Letters, 1986
- Characterisation of frequency response of 1.5 μm InGaAsP DFB laser diode and InGaAs PIN photodiode by heterodyne measurement techniqueElectronics Letters, 1986
- Picosecond optical mixing in fast photodetectorsApplied Physics Letters, 1986
- Millimetre-wave response of InGaAsP lasersElectronics Letters, 1985
- InGaAs pin photodiode fabricated on semi-insulating InP substrate for monolithic integrationElectronics Letters, 1984
- The soliton laserOptics Letters, 1984
- New method for measuring ultrawide frequency response of optical detectorsElectronics Letters, 1982
- Short-cavity single-mode 1.3 μm InGaAsP lasers with evaporated high-reflectivity mirrorsElectronics Letters, 1981