InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6S) , 4221-4223
- https://doi.org/10.1143/jjap.36.4221
Abstract
Low threshold current density (AlInGa)As/GaAs lasers based on InGaAs quantum dots (QDs) are grown by metal organic chemical vapour deposition (MOCVD). Quantum dots deposited at 490° C and covered with GaAs are directly revealed in the active region. On a transmission electron microscopy (TEM) image of the laser structure no large clusters or dislocations are found over a macroscopic distance. We show that the properties of QD lasers can be strongly improved if the QDs are confined by Al0.3Ga0.7As barriers and the cladding layers are grown at high temperature. Optimisation of the laser structure geometry allows extension of the range of ultrahigh temperature stability (T 0=385 K) of the threshold current to 50° C.Keywords
This publication has 5 references indexed in Scilit:
- Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasingSolid-State Electronics, 1996
- Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealingApplied Physics Letters, 1996
- Formation of coherent superdots using metal-organic chemical vapor depositionApplied Physics Letters, 1996
- Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laserSemiconductor Science and Technology, 1996
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982