Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
- 27 July 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (4) , 520-522
- https://doi.org/10.1063/1.121920
Abstract
Data are presented characterizing the spectral emission and the electroluminescence efficiency dependence on growth conditions of 1.3 μm wavelength InGaAs/GaAs quantum dots. We show that highly efficient 1.3 μm room temperature electroluminescence can be achieved with only ten total deposited monolayers with an averaged In content of 50%. Atomic force microscopy shows that the 1.3 μm wavelength quantum dots form with a density of ∼1.3×1010 cm−2.Keywords
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