1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser
- 1 February 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (2) , 185-187
- https://doi.org/10.1109/68.655352
Abstract
Low-threshold lasing is achieved at 1.154 /spl mu/m for an oxide-confined quantum-dot (QD) vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs substrate. The long wavelength emission is obtained through use of an InAs-GaAs QD active region. A continuous-wave (CW) threshold of 502 /spl mu/A is obtained for a device size of 10-/spl mu/m diameter, corresponding to a threshold current density of 640 A/cm/sup 2/.Keywords
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