Low threshold, large T o injectionlaser emissionfrom (InGa)As quantum dots
- 18 August 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (17) , 1416-1417
- https://doi.org/10.1049/el:19940939
Abstract
Low threshold, large To injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry.Keywords
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