Vertically Coupled Quantum Dot Lasers: First Device Oriented Structures with High Internal Quantum Efficiency
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6S)
- https://doi.org/10.1143/jjap.36.4219
Abstract
Main mechanisms of internal carrier losses and leakage from the ground state of quantum dots have been studied in heterostructure lasers based on vertically coupled quantum dots. It has been shown that the threshold current density may be reduced down to 15 A/cm2 at room temperature by reducing the non-radiative recombination and improving the carrier localization.Keywords
This publication has 1 reference indexed in Scilit:
- Low threshold, large
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injectionlaser emissionfrom (InGa)As quantum dotsElectronics Letters, 1994